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Samsung Solid State Drive 860 EVO 250GB - MZ-N6E250BW

Innovative V-NAND Technology with Enhanced Read/Write Performance.

$64.99
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Manufacturer part MZ-N6E250BW | Dell part AA062952 | Order Code aa062952 | Samsung
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Innovative V-NAND Technology with Enhanced Read/Write Performance.

WARNING: Reproductive Harm - www.P65Warnings.ca.gov.

Quick Specs


Type
Solid state drive - internal - shock-resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology
Capacity
250 GB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
3D multi-level cell (MLC)
Form Factor
M.2 2280
Interface
SATA 6Gb/s
Data Transfer Rate
600 MBps
Buffer Size
512 MB
Features
Shock-resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667
Dimensions (WxDxH)
0.9 in x 3.2 in x 0.1 in
Weight
0.28 oz
Manufacturer Warranty
5-year warranty

General


Device Type
Solid state drive - internal
Capacity
250 GB
Hardware Encryption
Yes
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
3D multi-level cell (MLC)
Form Factor
M.2 2280
Interface
SATA 6Gb/s
Buffer Size
512 MB
Features
Shock-resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667
Width
0.9 in
Depth
3.2 in
Height
0.1 in
Weight
0.28 oz

Performance


SSD Endurance
150 TB
Drive Transfer Rate
600 MBps (external)
Internal Data Rate
550 MBps (read) / 520 MBps (write)
Maximum 4KB Random Write
88000 IOPS
Maximum 4KB Random Read
97000 IOPS

Reliability


MTBF
1,500,000 hours

Expansion & Connectivity


Interfaces
1 x SATA 6 Gb/s - M.2 Card
Compatible Bay
M.2 2280

Power


Power Consumption
  • 2.2 Watt (average)
  • 4 Watt (maximum)

Manufacturer Warranty


Service & Support
Limited warranty - 5 years

Environmental Parameters


Min Operating Temperature
32 °F
Max Operating Temperature
158 °F
Shock Tolerance (operating)
1500 g @ 0.5 ms half-sine

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